Temperature dependent responsivity of quantum dot infrared photodetectors

Infrared Physics and Technology

Volumn 50, Issue 2-3, 2007, Pages 166-170

  Wang, S Y ^a   Lo, M C ^b   Hsiao, H Y ^c   Ling, H S ^b   Lee, C P ^b  

^a INSTITUTE OF ASTRONOMY AND ASTROPHYSICS   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Infrared detector; Intersubband; Quantum dot

Indexed keywords

COULOMB BLOCKADE; ELECTRIC CURRENTS; FERMI LEVEL; INDIUM COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS;

CURRENT GAIN; INTERSUBBAND; QUANTUM DOT INFRARED PHOTODETECTORS; TEMPERATURE DEPENDENT RESPONSIVITY;

INFRARED DETECTORS;

EID: 34047184229     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.10.027     Document Type: Article

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