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Volumn , Issue , 2009, Pages

Die stacking using 3D-wafer level packaging copper/polymer through-Si via technology and Cu/Sn interconnect bumping

Author keywords

[No Author keywords available]

Indexed keywords

DIE STACKING; ELECTRICAL CHARACTERIZATION; MICRO-BUMPS; POLYMER LINERS; PROCESS FLOWS; PROCESS USE; SI WAFER; SI-DRIE; THROUGH-SI VIA; WAFER LEVEL PACKAGING;

EID: 70549089102     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306559     Document Type: Conference Paper
Times cited : (23)

References (7)
  • 1
    • 0035714371 scopus 로고    scopus 로고
    • E. Beyne, Technologies for very high bandwidth electrical interconnects between next generation VLSI circuits, in IEEE Technical Digest of Electron Devices Meeting, pp.23.3.1-23.3.4, 2001.
    • E. Beyne, "Technologies for very high bandwidth electrical interconnects between next generation VLSI circuits," in IEEE Technical Digest of Electron Devices Meeting, pp.23.3.1-23.3.4, 2001.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.