An improved method for IGBT base excess carrier lifetime extraction

2009 International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD 2009

Volumn , Issue , 2009, Pages 206-210

  Tang, Yong ^a   Chen, Ming ^a   Wang, Bo ^a  

^a NAVAL UNIVERSITY OF ENGINEERING   (China)

Author keywords

Base excess carrier lifetime; IGBT; Model; Parameter extraction

Indexed keywords

DEVICE APPLICATION; EXCESS CARRIERS; EXTRACTION METHOD; IGBT MODELS; IMPROVED METHODS; PARAMETERS EXTRACTION; PHYSICAL MODEL; POWER ELECTRONICS DEVICES; SEMICONDUCTOR THEORY; SIMPLIFIED METHOD; SIMULATOR MODELS; THEORETIC ANALYSIS;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; DATA PROCESSING; ELECTROMAGNETS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MAGNETIC DEVICES; PARAMETER EXTRACTION; POWER ELECTRONICS; SIMULATORS; SUPERCONDUCTIVITY;

CARRIER LIFETIME;

EID: 70450265474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASEMD.2009.5306658     Document Type: Conference Paper

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