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Volumn 1173, Issue , 2009, Pages 99-103

X-ray photoelectron spectromicroscopy of doped silicon patterns

Author keywords

Core level; Photoelectron spectroscopy; Silicon doped; Spectromicroscopy; Synchrotron radiation; Valence band; Work function; XPEEM

Indexed keywords


EID: 70450260771     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3251269     Document Type: Conference Paper
Times cited : (1)

References (17)
  • 14
    • 0347354977 scopus 로고    scopus 로고
    • M. D. v Przychowski, G. K. L. Marx, G. H. Fecher et al., Surf. Sci. 549, 37-51 (2004).
    • M. D. v Przychowski, G. K. L. Marx, G. H. Fecher et al., Surf. Sci. 549, 37-51 (2004).
  • 17
    • 84864654042 scopus 로고    scopus 로고
    • p-n junctions
    • edited by Wiley Interscience, John Wiley & Sons
    • S. M. Sze and K. Ng. Kwok, "p-n junctions" in Physics of Semiconductor Devices edited by Wiley Interscience, John Wiley & Sons, 2006, pp. 86.
    • (2006) Physics of Semiconductor Devices , pp. 86
    • Sze, S.M.1    Kwok, K.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.