Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Masse N F ^a   Adams, A R ^a   Sweeney, S J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD CURRENT DENSITY;

AUGER COEFFICIENT; RADIATIVE COMPONENT; RADIATIVE CURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34247357021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722041     Document Type: Article

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