Modeling of carbon nanotube field-effect transistor with nanowelding treatment

Microelectronics Journal

Volumn 40, Issue 12, 2009, Pages 1681-1685

  Zhang, Wei ^a   Chen, Changxin ^a   Zhang, Yafei ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Ambipolar conduction; Carbon nanotube field effect transistor (CNFET); Newton Raphson iteration; Schottky barrier (SB)

Indexed keywords

AMBIPOLAR CONDUCTION; ANALYTIC EXPRESSIONS; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CARRIER DISTRIBUTIONS; DEVICE PERFORMANCE; ELECTROSTATIC POTENTIALS; INSULATOR THICKNESS; LANDAUER; NANOWELDING; NEWTON RAPHSON ITERATION; NUMERICAL MODELS; SCALING POWER; SCHOTTKY BARRIERS; ULTRASONIC NANOWELDING;

CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; NANOSENSORS; POISSON DISTRIBUTION; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SIMULATORS;

CARBON NANOTUBES;

EID: 70450221515     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2009.08.002     Document Type: Article

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