P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

Journal of Physics D: Applied Physics

Volumn 42, Issue 22, 2009, Pages

  Komatsu, Shojiro ^a   Sato, Yuhei ^b   Hirano, Daisuke ^c   Nakamura, Takuya ^c   Koga, Kazunori ^d   Yamamoto, Atsushi ^e   Nagata, Takahiro ^a   Chikyo, Toyohiro ^a   Watanabe, Takayuki ^b   Takizawa, Takeo ^c   Nakamura, Katsumitsu ^c   Hashimoto, Takuya ^c   Shiratani, Masaharu ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NIHON UNIVERSITY   (Japan)

^d KYUSHU UNIVERSITY   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BN FILMS; CHEMICAL VAPOUR DEPOSITION; CVD METHOD; HIGH EFFICIENCY; INITIAL STAGES; LASER PLASMA; P-TYPE; P-TYPE CONDUCTION; PHOTOVOLTAIC CONVERSION; PLASMA-CVD; PROBE METHODS; PULSE POWER; RECTIFYING PROPERTIES; REPETITION RATE; SI SUBSTRATES; SI(1 0 0); SIMULTANEOUS IRRADIATION;

BORON; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; DISTILLATION; DOPING (ADDITIVES); EXCIMER LASERS; FILM GROWTH; GAS LASERS; HETEROJUNCTIONS; LASER PRODUCED PLASMAS; LASER SURGERY; NITRIDES; PLASMA DEPOSITION; PLASMA INTERACTIONS; PULSED LASER APPLICATIONS; SILICON; SOLAR CELLS; SOLAR POWER GENERATION;

BORON NITRIDE;

EID: 70450213192     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/22/225107     Document Type: Article

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