Light emitting field effect transistor with two self-aligned Si nanocrystal layers

Applied Physics Letters

Volumn 95, Issue 19, 2009, Pages

  Beyer, V ^a   Schmidt, B ^a   Heinig, K H ^a   Stegemann, K H ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Signet Solar GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING VOLTAGES; DEVICE LIFETIME; DIRECT TUNNELING; GATE OXIDE; HOLE TUNNELING; OPERATION SPEED; OXIDE DEGRADATION; POLYCRYSTALLINE; QUANTUM MECHANICAL; SELF ALIGNMENT; SELF-ALIGNED; SI NANOCRYSTAL; SI SUBSTRATES; SILICON NANOCRYSTALS; THERMAL TREATMENT;

ALIGNMENT; DEGRADATION; ELECTRON MULTIPLIERS; HEAT TREATMENT; LIGHT; LIGHT EMISSION; NANOCRYSTALS; QUANTUM THEORY; SILICON COMPOUNDS; SILICON OXIDES; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 70449700084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242379     Document Type: Article

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