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Volumn 16, Issue 45, 2009, Pages 37-44

Annealing-induced solid-phase epitaxy at interfaces between CoFeB layers and MgO barrier-layer in CoFeB/MgO/CoFeB magnetic tunnel junctions and their magnetic properties

(6) Kitamoto, Y a Takeuchi, T a Tsunekawa, K b Choi, Y S b Nagamine, Y b Djayaprawira, D D b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Canon ANELVA Corporation ^* (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS COFEB; ANNEALING CONDITION; AS-DEPOSITED STATE; CHEMICAL COMPOSITIONS; FERROMAGNETIC LAYERS; INDUCED CRYSTALLIZATION; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RATIO; MGO BARRIER; MR RATIO; SOLID PHASE EPITAXY; SYNTHETIC ANTIFERROMAGNET STRUCTURES;

ANNEALING; ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; CRYSTAL GROWTH; ELECTRIC RESISTANCE; LATTICE MISMATCH; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETISM; MAGNETORESISTANCE; PHASE INTERFACES; SEMICONDUCTOR JUNCTIONS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 70449658380 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3140008 Document Type: Conference Paper

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.