Atomistic simulations of the buckling behavior of perfect and defective silicon carbide nanotubes

Computational Materials Science

Volumn 47, Issue 2, 2009, Pages 388-397

  Setoodeh, A R ^a   Jahanshahi, M ^a   Attariani, H ^a  

^a FERDOWSI UNIVERSITY OF MASHHAD   (Iran)

Author keywords

Buckling; Defects; Effective Young's modulus; Molecular dynamics; Silicon carbide nanotubes

Indexed keywords

ANTI-SITE DEFECT; ATOMISTIC SIMULATIONS; AXIAL COMPRESSIVE LOAD; BUCKLING BEHAVIORS; BUCKLING LOADS; BUCKLING MODE; COMPUTATIONAL RESULTS; CRITICAL BUCKLING LOADS; EFFECT OF TEMPERATURE; EFFECTIVE YOUNG'S MODULUS; ENVIRONMENTAL TEMPERATURE; GLOBAL BUCKLING; LOAD CAPABILITY; LOCAL BUCKLING; MOLECULAR DYNAMICS METHODS; SIC NANOTUBES; SILICON CARBIDE NANOTUBES; TERSOFF POTENTIAL; TUBE DIAMETERS; VACANCY-TYPE DEFECTS; YOUNG'S MODULUS;

CHIRALITY; DEFECTS; ELASTIC MODULI; ELASTICITY; ENANTIOMERS; MOLECULAR DYNAMICS; NANOTUBES; SILICON CARBIDE; SIMULATORS; STEREOCHEMISTRY; THERMAL EFFECTS;

BUCKLING;

EID: 70449626844     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2009.08.017     Document Type: Article

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