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Volumn 43, Issue 4, 2008, Pages 664-669
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Stability of single-wall silicon carbide nanotubes - molecular dynamics simulations
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Author keywords
Melting; Molecular dynamics; Nanotube; Nanowire; Nucleation; Silicon carbide; Stability
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Indexed keywords
DYNAMICS;
ELECTRIC WIRE;
EPITAXIAL GROWTH;
MOLECULAR DYNAMICS;
NANOFLUIDICS;
NANOPORES;
NANOSTRUCTURES;
NANOTUBES;
NANOWIRES;
NONMETALS;
NUCLEATION;
QUANTUM CHEMISTRY;
SILICON;
SILICON CARBIDE;
WALLS (STRUCTURAL PARTITIONS);
C-C BONDS;
CLASSICAL MOLECULAR DYNAMICS;
CRITICAL DIAMETER;
FREE END;
HETEROGENEOUS NUCLEATION;
HEXAGONAL DEFECTS;
HOMOGENEOUS NUCLEATION;
MELTING;
MOLECULAR DYNAMICS SIMULATIONS;
NANOTUBE;
NANOWIRE;
ONE-DIMENSIONAL;
SIC NANOTUBES;
SIC NANOWIRES;
SILICON CARBIDE (SIC);
SILICON CARBIDE NANOTUBES;
SINGLE-WALL;
SINGLE-WALL NANOTUBES;
STABILITY;
NANOSTRUCTURED MATERIALS;
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EID: 52949083562
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/j.commatsci.2008.01.038 Document Type: Article |
Times cited : (76)
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References (37)
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