Atomistic modeling of finite-temperature properties of β-SiC. I. Lattice vibrations, heat capacity, and thermal expansion

Journal of Nuclear Materials

Volumn 246, Issue 1, 1997, Pages 53-59

  Porter, Lisa J ^a,b   Li, Ju ^b   Yip, Sidney ^b  

^a Massachusetts Inst of Technology ^*  (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CALCULATIONS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; LATTICE VIBRATIONS; MOLECULAR DYNAMICS; SPECIFIC HEAT; THERMAL EXPANSION; THERMODYNAMIC PROPERTIES;

INTERATOMIC INTERACTIONS; TEMPERATURE SCALING PROCEDURE;

SILICON CARBIDE;

EID: 0031187089     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(97)00035-4     Document Type: Article

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