First-principles study of neutral silicon interstitials in 3C- and 4H-SiC

Philosophical Magazine

Volumn 89, Issue 26, 2009, Pages 2271-2284

  Liao, Ting ^a,b,c   Roma, Guido ^a   Wang, Jingyang ^b  

^a CEA SACLAY   (France)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Defects; Diffusion; First principles calculations; Silicon carbide

Indexed keywords

[110] DIRECTION; BRILLOUIN ZONES; BULK PROPERTIES; DEFECT FORMATION ENERGIES; DEFECT POPULATION; FIRST PRINCIPLES CALCULATIONS; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HEXAGONAL LAYERS; INTERSTITIAL DEFECTS; INTERSTITIALS; LATTICE DISTORTIONS; LOCAL COORDINATION; MIGRATION MECHANISMS; NEAREST NEIGHBOUR; NEUTRAL STATE; ORBITAL BASIS SET; PLANE WAVE; POLYTYPES; SUPER CELL; VIA FIRST;

DEFECTS; WEAR RESISTANCE;

SILICON CARBIDE;

EID: 70449558582     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430903055184     Document Type: Article

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