New development of self-interaction corrected DFT for extended systems applied to the calculation of native defects in 3C-SiC

Physica Scripta T

Volumn T124, Issue , 2006, Pages 86-90

  Bylaska, Eric J ^a   Tsemekhman, Kiril ^b   Gao, Fei ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEFECTS; DENSITY FUNCTIONAL THEORY; OPTIMIZATION; POSITIVE IONS;

FORMATION ENERGIES; SILICON INTERSTITIALS;

SILICON CARBIDE;

EID: 33846933395     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T124/017     Document Type: Article

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