Room temperature photoluminescence and dc resistivity of Si0.95Ge0.05 alloy nanowires grown in microwave H-field

Journal of Alloys and Compounds

Volumn 488, Issue 1, 2009, Pages 328-330

  Dube, Charu Lata ^a   Kashyap, Subhash C ^a   Dube, D C ^b   Agarwal, D K ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b THE NORTHCAP UNIVERSITY   (India)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Electrical transport; Nanowires; Photoluminescence; Semiconductors; Thermoelectric materials

Indexed keywords

DC ELECTRICAL; DC RESISTIVITY; DEVICE FABRICATIONS; ELECTRICAL-TRANSPORT; ENERGY RANGES; HIGH ASPECT RATIO; LOW TEMPERATURES; NON-EQUILIBRIUM GROWTH; PHASE FORMATIONS; POLYCRYSTALLINE SAMPLES; RADIATIVE RECOMBINATION; RESONANT CAVITY; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEMICONDUCTORS; SHORT DURATIONS; SINGLE MODE; THERMOELECTRIC MATERIALS;

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ASPECT RATIO; GERMANIUM; NANOWIRES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SILICON ALLOYS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

ELECTRIC WIRE;

EID: 70449534711     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.08.122     Document Type: Article

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