Carrier transport and related phenomena in nanosize periodic silicon/insulator structures

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 111-118

  Berashevich, J A ^a   Danilyuk, A L ^a   Kholod, A N ^a   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

Carrier transport via traps; Electroluminescence; Periodic silicon insulator nanostructures; Tunnel resonant transfer

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS;

CARRIER TRANSPORT; MULTI QUANTUM WELLS (MQW);

MATERIALS SCIENCE;

EID: 1642387578     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00664-5     Document Type: Conference Paper

References (24)

1. Gribkovskii V.P. Prog. Quant. Electr. 19:(1):1995;41-88.
2. Chang L.L., Esaki L., Tsu R. Appl. Phys. Lett. 24:(12):1974;593-595.
3. Capasso F., Sen S., Beltram F., Lunardi L.M., Vengurlekar A.S., Smith P.R., Shan N.J., Malik R.J., Cho A.Y. IEEE Trans. El. Dev. 36:(10):1989;2065-2082.
4. Pucker G., Bellutti P., Spinella C., Gatterer K., Cazzanelli M., Pavesi L. J. Appl. Phys. 88:(10):2000;6044-6051.
5. 2 superlattics. Physics, Chemistry and Application of Nanostructures. 1999;World Scientific, Singapore.
6. Menard S., Liniger M., Bassani F., d'Avitaya Arnaud F. Mater. Sci. Eng. B69-70:2000;464-467.
7. Watanabe M., Iketani I., Asada M. J. Appl. Phys. 39:(2):2000;L964-L967.
8. Prengel F., Wacker A., Scholl E. Phys. Rev. B. 50:(3):1994;1705-1712.
9. Sze S.M. Physics of Semiconductor Devices. 1981;Academic Press, New York.
10. Duke C.B. Tunneling in Solids. Solid Physics Supplement. 10: 1969;Academic Press, New York.
11. European projects: Silicon Modules for Integrated Light Engineering. Marseille (France), 2000.
12. Ciraci S., Ellialtioglu S. Phys. Rev. B. 25:(6):1982;4019-4030.
13. Cuberes M.T., Bauer A., Wen H.J. J. Vasc. Sci. Technol. B. 12:1994;2646-2652.
14. Nicollian E.H. J. Vasc. Sci. Technol. 14:(5):1977;1112-1121.
15. loannou-Sougleridis V., Ouisse T., Nassiopoulou A.G., Bassani F., d'Avitaya Arnaud F. J. Appl. Phys. 89:(1):2001;610-618.
16. Watanabe M., Iketani I., Asada M. J. Appl. Phys. 39:(2):2000;L964-L967.
17. Watanabe M., Funayama T., Teraji T., Sakamaki N. J. Appl. Phys. 39:(2):2000;L716-L719.
18. Berashevich J.A., Danilyuk A.L., Kholod A.N., Borisenko V.E. Semiconductors. 35:(1):2001;112-116.
19. Berashevich J.A., Danilyuk A.L., Borisenko V.E. Semiconductor. 36:(6):2002;718-723.
20. Kimerling L.C., Kolenbrander K.D., Michel J., Palm J. Solid State Phys. 50:1997;333-337.
21. Filonov A.B., Kholod A.N., Borisenko V.E., Saul A., Bassani F., d'Avitaya Arnaud F. Comput. Mater. Sci. 10:1998;148-153.
22. Lokwood D.J., Liu Z.H., Baribeau J.M. Phys. Rev. Lett. 76:(3):1996;539-541.
23. Berashevich J.A., Kamenev B.V., Borisenko V.E. Semiconductor. 36:(2):2002;213-218.
24. Berashevich J.A., Danilyuk A.L., Kholod A.N., Borisenko V.E. Semiconductor. 36:(1):2002;85-90.