Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

Microelectronic Engineering

Volumn 87, Issue 1, 2010, Pages 10-14

  Lee, Sang Won ^a   Ham, Moon Ho ^a   Kar, Jyoti Prakash ^a   Lee, Woong ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

Air gap structure; Field effect transistor; Magnetic alignment; ZnO nanowire

Indexed keywords

AIR-GAP FIELD; AIR-GAP STRUCTURE; AIR-GAPS; BACK-GATE; BIO-CHEMICAL SENSOR; CIRCUIT CONFIGURATIONS; ELECTRODE PATTERN; MAGNETIC ALIGNMENT; MATRIX; NANOWIRE FET; ONE-DIMENSIONAL NANOSTRUCTURE; OPERATIONAL CHARACTERISTICS; SURFACE ADSORBATES; ZNO NANOWIRE; ZNO NANOWIRES;

ALIGNMENT; FABRICATION; LOGIC CIRCUITS; MAGNETIC FIELDS; MESFET DEVICES; NANOWIRES; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; SWITCHING CIRCUITS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 70449524670     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.05.008     Document Type: Article

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