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Volumn 44, Issue 8-9, 2001, Pages 2327-2330
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Structure of {112} Σ3 boundary in silicon and diamond
a
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Author keywords
Grain boundaries; Semiconductor; Silicon; Transmission electron microscopy
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Indexed keywords
CHEMICAL POLISHING;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL ORIENTATION;
EVAPORATION;
GRAIN BOUNDARIES;
HIGH RESOLUTION ELECTRON MICROSCOPY;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING DIAMONDS;
SEMICONDUCTING SILICON;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
VACUUM;
HIGH VOLTAGE SUPER RESOLUTION ELECTRON MICROSCOPES;
SEMICONDUCTING FILMS;
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EID: 0035906817
PISSN: 13596462
EISSN: None
Source Type: Journal
DOI: 10.1016/S1359-6462(01)00910-1 Document Type: Article |
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Times cited : (28)
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References (12)
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