Atomic structure of faceted ∑3 CSL grain boundary in silicon: HRTEM and Ab-initio calculation

Materials Transactions

Volumn 48, Issue 10, 2007, Pages 2585-2589

  Sakaguchi, Norihito ^a   Ichinose, Hideki ^b   Watanabe, Seiichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b RIKEN   (Japan)

Author keywords

Abinitio calculation; Atomic structure; Coincidence site lattice (CSL) grain boundary; Electronic structure; High resolution electron microscopy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; HIGH RESOLUTION ELECTRON MICROSCOPY; SILICON;

AB INITIO CALCULATION; ASYMMETRIC STRUCTURE; COINCIDENCE SITE LATTICE (CSL) GRAIN BOUNDARY;

GRAIN BOUNDARIES;

EID: 36549078194     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MD200706     Document Type: Conference Paper

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