Photoluminescence and X-ray photoelectron spectroscopy of p-type phosphorus-doped ZnO films prepared by MOCVD

Chinese Physics Letters

Volumn 26, Issue 9, 2009, Pages

  Li, Xiang Ping ^a   Zhang, Bao Lin ^a   Guan, He Song ^a   Shen, Ren Sheng ^b   Peng, Xin Cun ^a   Zheng, Wei ^a   Xia, Xiao Chuan ^a   Zhao, Wang ^a   Dong, Xin ^a   Du, Guo Tong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; BINDING ENERGY; CHEMICAL BONDS; FILM PREPARATION; HOLE CONCENTRATION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOELECTRONS; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ACCEPTOR-BOUND EXCITONS; DEPOSITION TECHNOLOGY; INP SUBSTRATES; LOWS-TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; P-TYPE; PHOSPHORUS-DOPED ZNO; SEMI-INSULATING; ZINC VACANCY; ZNO FILMS;

II-VI SEMICONDUCTORS;

EID: 70449442530     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/9/098101     Document Type: Article

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