Effect of chemical mechanical polishing scratch on TDDB reliability and its reduction in 45nm BEOL process

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 613-618

  Liu, W ^a   Lim, Y K ^a   Zhang, F ^a   Zhang, W Y ^a   Chen, C Q ^a   Zhang, B C ^a   Tan, J B ^a   Sohn, D K ^a   Hsia, L C ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

CMP; Defect; Polish scratch; TDDB

Indexed keywords

BACK END OF LINES; BRIGHT FIELDS; CMP; EFFECT OF CHEMICALS; ELECTRICAL FAULTS; EMBEDDED PARTICLES; HOT SPOT; IN-SITU; LINER DAMAGE; POLISH SCRATCH; RELIABILITY FAILURE; RELIABILITY PERFORMANCE; SCRATCH REDUCTION; SEM; TDDB; TEM; THERMALLY-INDUCED VOLTAGE ALTERATIONS; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TOPDOWN; WAFER MAPS;

CHEMICAL MECHANICAL POLISHING; CORROSION; DEFECTS; DEGRADATION; NANOTECHNOLOGY; POLISHING; RELIABILITY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL POLISHING;

EID: 70449134569     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173319     Document Type: Conference Paper

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