Reducible and non-reducible defect clusters in tin-doped indium oxide

Solid State Communications

Volumn 150, Issue 1-2, 2010, Pages 18-21

  Inerbaev, Talgat M ^a,b   Sahara, Ryoji ^b   Mizuseki, Hiroshi ^b   Kawazoe, Yoshiyuki ^b   Nakamura, Takashi ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b TOHOKU UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A. Semiconductors; C. Point defects

Indexed keywords

A. SEMICONDUCTORS; C. POINT DEFECTS; CONDUCTION ELECTRONS; DEFECT CLUSTER; DEFECT FORMATION ENERGIES; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPING ATOMS; ELECTRONIC PARTS; EQUILIBRIUM CONCENTRATION; INTERSTITIAL OXYGEN; LIMITING CASE; LOCAL COORDINATION; NON-REDUCIBLE; REDUCTION CONDITIONS; RELATIVE STABILITIES; TIN DOPED INDIUM OXIDE;

ATOMS; CHEMICAL STABILITY; DENSITY FUNCTIONAL THEORY; INDIUM; INDIUM COMPOUNDS; OXYGEN; PHOTOCURRENTS; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; TIN;

DEFECTS;

EID: 70449120052     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.10.016     Document Type: Article

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