-
1
-
-
0020115402
-
Electrical Properties and Defect Model of Tin-Doped Indium Oxide Layers
-
G. Frank and H. Köstlin, "Electrical Properties and Defect Model of Tin-Doped Indium Oxide Layers," Appl. Phys. A, 27, 197 (1982).
-
(1982)
Appl. Phys. A
, vol.27
, pp. 197
-
-
Frank, G.1
Köstlin, H.2
-
3
-
-
0001443931
-
12
-
12," J. Solid State Chem., 135, 140 (1998).
-
(1998)
J. Solid State Chem.
, vol.135
, pp. 140
-
-
Nadaud, N.1
Leequeux, N.2
Nanot, M.3
Jové, J.4
Roisnel, T.5
-
4
-
-
0038600019
-
Neutron Diffraction Study of the Defect Structure of Indium-Tin- Oxide
-
G. B. González, J. B. Cohen, J. H. Hwang, T. O. Mason, J. P. Hodges, and J. D. Jorgensen, "Neutron Diffraction Study of the Defect Structure of Indium-Tin- Oxide," J. Appl. Phys., 89 [5] 2550-55 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.5
, pp. 2550-2555
-
-
González, G.B.1
Cohen, J.B.2
Hwang, J.H.3
Mason, T.O.4
Hodges, J.P.5
Jorgensen, J.D.6
-
5
-
-
0032115696
-
High-Efficiency Carrier Generation for the Oxygen Release Reaction in Indium Tin Oxide
-
T. Omata, H. Fujiwara, S. Otsuka-Yao-Matsuo, N. Ono, and H. Ikawa, "High-Efficiency Carrier Generation for the Oxygen Release Reaction in Indium Tin Oxide," Jpn. J. Appl. Phys., 37, L879-L881 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
-
-
Omata, T.1
Fujiwara, H.2
Otsuka-Yao-Matsuo, S.3
Ono, N.4
Ikawa, H.5
-
6
-
-
0032022138
-
In-Situ Observation of the Electrical Conductivity upon Release and Uptake of Oxygen in Indium Tin Oxide Sinter
-
T. Omata, H. Fujiwara, S. Otsuka-Yao-Matsuo, and N. Ono, "In-Situ Observation of the Electrical Conductivity upon Release and Uptake of Oxygen in Indium Tin Oxide Sinter," Jpn. J. Appl. Phys., 37 [1] 868-71 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, Issue.1
, pp. 868-871
-
-
Omata, T.1
Fujiwara, H.2
Otsuka-Yao-Matsuo, S.3
Ono, N.4
-
7
-
-
0242334622
-
Defect Structures of Tin-Doped Indium Oxide
-
O. Warschkow, D. E. Ellis, O. B. Gonzalez, and T. O. Mason, "Defect Structures of Tin-Doped Indium Oxide," J. Am. Ceram. Soc., 86 [10] 1700-706 (2003).
-
(2003)
J. Am. Ceram. Soc.
, vol.86
, Issue.10
, pp. 1700-1706
-
-
Warschkow, O.1
Ellis, D.E.2
Gonzalez, O.B.3
Mason, T.O.4
-
8
-
-
33748616559
-
GULP (General Utility Lattice Program), A Computer Program for the Symmetry Adapted Simulation of Solids
-
J. D. Gale, "GULP (General Utility Lattice Program), A Computer Program for the Symmetry Adapted Simulation of Solids," J. Chem. Soc., Faraday Trans., 93, 629 (1997).
-
(1997)
J. Chem. Soc., Faraday Trans.
, vol.93
, pp. 629
-
-
Gale, J.D.1
-
9
-
-
8744274081
-
Empirical Potential Derivation for Ionic Materials
-
J. D. Gale, "Empirical Potential Derivation for Ionic Materials," Philos. Mag. B, 73, 3 (1996).
-
(1996)
Philos. Mag. B
, vol.73
, pp. 3
-
-
Gale, J.D.1
-
10
-
-
34548433670
-
Theory of the Dielectric Constants of Alkali Halide Crystals
-
B. I. Dick and A. W. Overhauser, "Theory of the Dielectric Constants of Alkali Halide Crystals," Phys. Rev., 112, 90 (1958).
-
(1958)
Phys. Rev.
, vol.112
, pp. 90
-
-
Dick, B.I.1
Overhauser, A.W.2
-
11
-
-
0009435874
-
Conduction in Polar Crystals: Electrolytic Conduction in Solid Salts
-
M. F. Mott and M. J. Littleton, "Conduction in Polar Crystals: Electrolytic Conduction in Solid Salts," Trans. Faraday Soc., 34, 485 (1938).
-
(1938)
Trans. Faraday Soc.
, vol.34
, pp. 485
-
-
Mott, M.F.1
Littleton, M.J.2
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