The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technology

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 170-173

  Gadlage, M J ^a   Ahlbin, J R ^a   Narasimham, B ^a   Ramachandran, V ^a   Dinkins, C A ^a   Bhuva, B L ^a   Schrimpf, R D ^a   Shuler, R L ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b NASA JOHNSON SPACE CENTER   (United States)

Author keywords

Pulse width; Radiation environment; SER; SET; Single event; Single event transient; Soft error; Temperature

Indexed keywords

PULSE WIDTH; RADIATION ENVIRONMENT; SER; SET; SINGLE EVENT; SINGLE EVENT TRANSIENT; SOFT ERROR;

AMPLIFICATION; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ERROR CORRECTION; MICROPROCESSOR CHIPS; RELIABILITY; TEMPERATURE; THERMAL EFFECTS;

TRANSIENTS;

EID: 70449095957     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173246     Document Type: Conference Paper

References (8)

1. G. Guo, T. Hirao, J. S. Laird, S. Onoda, T. Wakasa, T. Yamakawa, and T. Kamiya, "Temperature dependence of single event transient current by heavy ion microbeam on p+/n/n+ epilayer junctions," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2834-2839, Oct. 2004.
2. C. Shuming, L. Bin, L. Biwei, and L. Zheng, "Temperature dependence of digital SET pulse width in bulk and SOI technologies," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2914-2920, Dec. 2008.
3. M. L. Alles, L. W. Massengill, S. E. Kerns, K. L. Jones, J. E. Clark, W. F. Kraus, "Effect of temperature-dependent bipolar gain distribution on SEU vulnerability of SOI CMOS SRAMS," Proc, 1992 IEEE Int. SOI Conf., pp. 96-97, Oct. 1992.
4. B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, D. McMorrow, "On-chip characterization of single event transient pulse widths", IEEE Trans. on Dev. and Mat. Rel., vol. 6, p. 542-549, 2006.
5. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies,", IEEE Trans. on Nucl. Sci., vol. 54, no. 6, p. 2506-2511, 2007.
6. B. Narasimham, M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, W. T. Holman, A. F. Witulski, X. Zhu, A. Balasubramanian, and S. A. Wender, "Neutron and alpha particle-induced transients in 90 nm technology," IEEE International Reliability Physics Symposium, p.478-481, April 27 2008 - May 1 2008.
7. M. J. Gadlage, R. D. Schrimpf, B. Narasimham, J. A. Pellish, K. M. Warren, R. A. Reed, R.A. Weller, B. L. Bhuva, L. W. Massengill, and X. Zhu, "Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology," IEEE Electron Device Letters, vol. 29, no. 6, p. 638-640, June 2008.
8. O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, "Charge collection and charge sharing in a 130 nm CMOS technology," IEEE Trans. on Nucl. Sci, vol. 53, no. 6, p. 3253-3258, Dec. 2006.