Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 622-623

  Nam, K J ^a   Lee, S H ^a   Kim, D C ^a   Hyun, S ^a   Kim, J H ^a   Jeon, I S ^a   Kang, S B ^a   Choi, S ^a   Chung, U I ^a   Moon, J T ^a  

^a Semiconductor R and D Center

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HOT CARRIERS; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; THICKNESS MEASUREMENT;

DUAL GATE OXIDES; HOT CARRIER STRESS;

MOSFET DEVICES;

EID: 34548730270     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369981     Document Type: Conference Paper

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6. D.K. Schroder Appl. Phys. P1, 2003.