Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2835-2838

  Roh, O H ^a   Tomita, Y ^a   Ohsugi, M ^a   Wang, X ^a   Ishitani, Y ^a   Yoshikawa, A ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTALS; DOPING (ADDITIVES); GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SUBSTRATES;

COAXIAL IMPACT COLLISIONS; SIGNAL INTENSITIES; TIME-OF-FLIGHT SIGNALS;

ZINC OXIDE;

EID: 7044233282     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405100     Document Type: Conference Paper

References (10)

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