Large anomalous Hall resistance of pair δ -doped GaAs structures grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Jung, D W ^a   Noh, J P ^a   Touhidul Islam, A Z M ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIC FLUX; MOLECULAR BEAM EPITAXY;

NONLINEAR DEPENDENCE; NONLINEAR HALL RESISTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40149086226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838487     Document Type: Article

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