Cu In1-x Gax Se2 Absorber Layer Fabricated by Pulse-Reverse Electrodeposition Technique for Thin Films Solar Cell

Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

  Fu, Yen Pei ^a   You, Rui Wei ^a   Lew, Kar Kit ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ARGON ATMOSPHERES; AS-DEPOSITED FILMS; CHALCOPYRITE STRUCTURES; CIGS THIN FILMS; CRYSTALLINE STRUCTURE; DURATION TIME; ELECTROCHEMICAL MEASUREMENTS; ELECTRODEPOSITION TECHNIQUE; MICRO-RAMAN SPECTRA; MICROCRYSTALLINE PHASIS; MORPHOLOGICAL FEATURES; MULTI-PULSE SEQUENCE; MULTIPULSES; P-TYPE; POLYCRYSTALLINE THIN FILM; PROFILOMETERS; PULSE-REVERSE ELECTRODEPOSITION; SECONDARY PHASIS; SINGLE PHASE; THIN FILMS SOLAR CELLS; VIBRATION MODES; X RAY DIFFRACTOMETERS;

ARGON; COPPER COMPOUNDS; ELECTRODEPOSITION; FABRICATION; GALLIUM; PHOTOVOLTAIC CELLS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; THIN FILM DEVICES; THIN FILMS;

COPPER;

EID: 70350719143     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3240330     Document Type: Article

References (28)

1. M. Kemell, M. Ritala, and M. Leskela, CRC Crit. Rev. Solid State Mater. Sci., 30, 1 (2005). 10.1080/10408430590918341
2. I. Repins, M. A. Contreras, B. Egaas, C. DeHart, J. Scharf, C. L. Perkins, B. To, and R. Noufi, Prog. Photovoltaics, 16, 235 (2008). 10.1002/pip.822
3. M. A. Contreras, B. Egaas, K. Ramanathan, J. Hittner, A. Swartzlander, F. Hasoon, and R. Noufi, Prog. Photovoltaics, 7, 311 (1999). 10.1002/(SICI)1099- 159X(199907/08)7:4<311::AID-PIP274>3.0.CO;2-G
4. L. Stolt and J. Hedstrom, Appl. Phys. Lett., 62, 597 (1993). 10.1063/1.108867
5. A. M. Gabor, J. R. Tuttle, D. S. Albin, M. A. Contreras, and R. Noufi, Appl. Phys. Lett., 65, 198 (1994). 10.1063/1.112670
6. A. Gupta and S. Isomura, Sol. Energy Mater. Sol. Cells, 53, 385 (1998). 10.1016/S0927-0248(98)00039-7
7. R. N. Bhattacharya, H. Wiesner, T. A. Berens, R. J. Matson, J. Keane, K. Ramanathan, A. Swartzlander, A. Manson, and R. N. Noufi, J. Electrochem. Soc., 144, 1376 (1997). 10.1149/1.1837599
8. A. M. Fernandez, Thin Solid Films, 474, 10 (2005). 10.1016/j.tsf.2004.02. 104
9. J. Zank, M. Mehlin, and H. P. Fritz, Thin Solid Films, 286, 259 (1996). 10.1016/S0040-6090(95)08214-X
10. M. Ganchev, J. Kois, M. Kaelin, S. Bereznev, E. Tzvetkova, O. Volobujeva, N. Stratieva, and A. Tiwari, Thin Solid Films, 511-512, 325 (2006). 10.1016/j.tsf.2005.11.076 (Pubitemid 43728920)
11. T. Matsuoka, Y. Nagahori, and S. Endo, Jpn. J. Appl. Phys., Part 1, 33, 6105 (1994). 10.1143/JJAP.33.6105
12. A. Kampmann, V. Sittinger, J. Rechid, and R. Reineke-Koch, Thin Solid Films, 361-362, 309 (2000). 10.1016/S0040-6090(99)00863-9 (Pubitemid 30552411)
13. M. Fahoume, H. Boudraine, M. Aggour, F. Chraibi, A. Ennaoui, and J. L. Delplancke, J. Phys. IV, 123, 75 (2005). 10.1051/jp4:2005123012
14. N. B. Chaure, A. P. Samantilleke, R. P. Burton, J. Young, and I. M. Dharmadasa, Thin Solid Films, 472, 212 (2005). 10.1016/j.tsf.2004.07.051
15. M. E. Calixto, K. D. Dobson, B. E. McCandles, and R. W. Birkmire, J. Electrochem. Soc., 153, G521 (2006). 10.1149/1.2186764
16. M. S. Chandrasekar and M. Pushpavanam, Electrochim. Acta, 53, 3313 (2008). 10.1016/j.electacta.2007.11.054
17. J. X. Yang, Z. G. Jin, C. J. Li, W. J. Wang, and Y. T. Chai, Electrochem. Commun., 11, 711 (2009). 10.1016/j.elecom.2008.12.062
18. S. Nomura, K. Nishiyama, K. Tanaka, M. Sakakibara, M. Ohtsubo, N. Furutani, and S. Endo, Jpn. J. Appl. Phys., Part 1, 37, 3232 (1998). 10.1143/JJAP.37.3232
19. Y. P. Fu, R. W. You, and K. K. Lew, J. Electrochem. Soc., 156, E133 (2009). 10.1149/1.3158558
20. D. Papadimitriou, N. Esser, and C. Xue, Phys. Status Solidi B, 242, 2633 (2005). 10.1002/pssb.200541132 (Pubitemid 41650661)
21. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B, 302-303, 140 (2001). 10.1016/S0921-4526(01)00419-7 (Pubitemid 32551294)
22. C. Rincon and F. J. Ramirez, J. Appl. Phys., 72, 4321 (1992). 10.1063/1.352195
23. H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, and T. Irie, Phys. Rev. B, 45, 13323 (1992). 10.1103/PhysRevB.45.13323
24. H. Neumann, Sol. Cells, 16, 399 (1986). 10.1016/0379-6787(86)90100-6 (Pubitemid 16592663)
25. E. Anastassakis, Solid State Commun., 13, 1297 (1973). 10.1016/0038-1098(73)90153-1
26. L. L. Hench and J. K. West, Principles of Electronic Ceramics, p. 103, John Wiley & Sons, New York (1990).
27. R. Noufi, R. Axton, C. Herrington, and S. K. Deb, Appl. Phys. Lett., 45, 668 (1984). 10.1063/1.95350 (Pubitemid 14646926)
28. B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, p. 217, Pearson Education International, New Jersey (2006).