12.3% Efficient culn1-xGaxSe2-based device from electrodeposited precursor

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1376-1379

  Bhattacharya, R N ^a,b   Wiesner, H ^a   Berens, T A ^a   Matson, R J ^a   Keane, J ^a   Ramanathan, K ^a   Swartzlander, A ^a   Mason, A ^a   Noufi, R N ^a,b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; SEMICONDUCTING INTERMETALLICS; SOLAR CELLS; X RAY DIFFRACTION ANALYSIS;

ELECTRODEPOSITED PRECURSOR FILM; MOLYBDENUM SUBSTRATE;

THIN FILMS;

EID: 0031125328     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837599     Document Type: Article

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