Electrochemical properties of solid-liquid interface of Cu In1-x Ga x Se2 prepared by electrodeposition with various gallium concentrations

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Fu, Yen Pei ^a   You, Rui Wei ^a   Lew, Kar Kit ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER RESISTANCE; CIGS THIN FILMS; CONCENTRATION OF; DIFFUSION PROCESS; ELECTRICAL DOUBLE LAYERS; ELECTROCHEMICAL BEHAVIORS; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY TECHNIQUES; ELECTROCHEMICAL KINETICS; ELECTROCHEMICAL MEASUREMENTS; ELECTRODEPOSITION METHODS; ELECTRODEPOSITION PROCESS; KINETIC BEHAVIOR; P-TYPE; POLARIZATION CURVES; REDUCTION POTENTIAL; SOLID-LIQUID INTERFACES;

CHARGE TRANSFER; ELECTRIC PROPERTIES; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMICAL PROPERTIES; ELECTRODEPOSITION; ELECTROLYSIS; ELECTROLYTES; FILM PREPARATION; GALLIUM ALLOYS; ION EXCHANGE; METAL IONS; PHASE INTERFACES; REACTION RATES; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

ELECTROCHEMICAL ELECTRODES;

EID: 68049129437     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3158558     Document Type: Article

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