Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Saffarzadeh, Alireza ^a,b   Daqiq, Reza ^c  

^a PAYAME NOOR UNIVERSITY   (Iran)

^b INSTITUTE FOR RESEARCH IN FUNDAMENTAL SCIENCES IPM   (Iran)

^c ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CAN DESIGN; DILUTE MAGNETIC SEMICONDUCTORS; HIGH-SPEED; NONMAGNETIC LAYERS; QUANTUM SIZE EFFECTS; RESONANT TUNNELING DIODES; SPIN DIRECTION; STRUCTURAL ASYMMETRY; TRAVERSAL TIME; TUNNELING TIME;

ELECTRON TUBE DIODES; FREQUENCY DIVIDING CIRCUITS; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; RESONANT TUNNELING; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DIODES; SPIN POLARIZATION; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODES; WIND TUNNELS; ZINC;

SPIN DYNAMICS;

EID: 70350716075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3245396     Document Type: Article

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