Large area GaN Schottky photodiode with low leakage current

Electronics Letters

Volumn 40, Issue 17, 2004, Pages 1080-1082

  Aslam, S ^a   Vest, R E ^b   Franz, D ^a   Yan, F ^a   Zhao, Y ^c  

^a RAYTHEON COMPANY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Keithley Instruments Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT VALUES; CONTACT METALS; CONTRAST RATIO; PHOTODIODE FABRICATION;

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MONOCHROMATORS; PHOTODIODES; SPECTRUM ANALYSIS; STATISTICAL METHODS; SURFACE PHENOMENA; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

SCHOTTKY BARRIER DIODES;

EID: 4444221384     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045563     Document Type: Article

References (9)

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