Magnetic tunnel junctions using LaSrMnO ferromagnetic electrodes and PbZrTiO3 piezoelectric barrier

Journal of Materials Research

Volumn 24, Issue 10, 2009, Pages 3065-3072

  Pradhan, A K ^a   Mundle, Rajeh ^a   Konda, Rajini B ^a   Yasar, Ozgul ^a   Williams, Frances ^a   Bahoura, Messaoud ^a  

^a NORFOLK STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER POTENTIAL; BARRIER THICKNESS; FERROELECTRIC POLARIZATION; FERROMAGNETIC ELECTRODES; FERROMAGNETIC HYSTERESIS; MAGNETIC BEHAVIOR; MAGNETIC TUNNEL JUNCTION; MICROSCOPIC STUDY; PZT; QUANTUM COMPUTING; ROOM TEMPERATURE; TRILAYER FILM; TUNNELING CHARACTERISTICS; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PULSED LASER DEPOSITION; QUANTUM COMPUTERS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING MATERIALS; TUNNELS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 70350465347     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0378     Document Type: Article

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