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Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3597-3599

La1-xBaxMnO3 epitaxial thin films by pulsed-laser deposition: A consequence of strain stabilization

(4) Pradhan, A K a Sahu, D R b Roul, B K b Feng, Y c

a UNIVERSITY OF VIRGINIA (United States)

b Institute of Materials Science (India)

c NORTHWEST INSTITUTE FOR NONFERROUS METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING LEVELS; EPITAXIAL THIN FILMS; IMAGING APPLICATIONS; ROOM TEMPERATURE; STRAIN STABILIZATION; TEMPERATURE COEFFICIENT OF RESISTIVITY; TEMPERATURE REGIMES;

BARIUM; DEPOSITION; EPITAXIAL FILMS; MANGANESE OXIDE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METAL IONS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMOGRAPHY (IMAGING); VAPOR DEPOSITION;

PULSED LASERS;

EID: 79956028399 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1518157 Document Type: Article

Times cited : (25)

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