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Volumn 89, Issue 5, 2001, Pages 2786-2790

Pinholes may mimic tunneling

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EID: 18044399874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344220     Document Type: Article
Times cited : (60)

References (34)
  • 13
    • 0004243866 scopus 로고
    • edited by E. Burstein and S. Lundqvist Plenum, New York
    • See, e.g., Tunneling Phenomena in Solids, edited by E. Burstein and S. Lundqvist (Plenum, New York, 1969).
    • (1969) Tunneling Phenomena in Solids
  • 15
    • 0000531079 scopus 로고
    • H. Srikanth and A. K. Raychaudhuri, Phys. Rev. B 46, 14713 (1992) find a change in the sign of curvature of differential conductance, due to local heating, for a series of scanning-tunneling point contacts ranging from microshorts to tunnel junctions. Their well-defined point contacts differ from our accidental pinholes.
    • (1992) Phys. Rev. B , vol.46 , pp. 14713
    • Srikanth, H.1    Raychaudhuri, A.K.2
  • 25
    • 84972017669 scopus 로고
    • Nov., 23
    • Having shown that surface diffusion and sticking fail to destroy the exponential regime, we expect this result will also carry over into more detailed molecular-dynamics calculations of the type carried out by I. K. Schuller, MRS Bull. XIII, Nov., 23 (1988).
    • (1988) MRS Bull. , vol.13
    • Schuller, I.K.1
  • 28
    • 0001657711 scopus 로고
    • Yu. V. Sharvin, Zh. Eksp. Teor. Fiz. 48, 984 (1965) [ Sov. Phys. JETP 21, 655 (1965)].
    • (1965) Sov. Phys. JETP , vol.21 , pp. 655
  • 29
    • 0002129183 scopus 로고    scopus 로고
    • One might also model the effect of polishing scratches in seeding pinholes by imposing a surface potential on the substrate; see D. J. Keavney, E. E. Fullerton, and S. D. Bader, J. Appl. Phys. 81, 795 (1997).
    • (1997) J. Appl. Phys. , vol.81 , pp. 795
    • Keavney, D.J.1    Fullerton, E.E.2    Bader, S.D.3
  • 33
    • 33744692902 scopus 로고
    • G. E. Blonder, M. Tinkham, and T. M. Klapwijk, Phys. Rev. B 25, 4515 (1982); G. E. Blonder and M. Tinkham, ibid. 27, 112 (1983) examine the crossover from Andreev reflection to tunneling as the insulating barrier increases in strength. As a practical matter, with a typical band gap (∼10 eV), the Andreev signature should become insignificant for insulating thicknesses greater than a few monolayers. Thus, the presence of Andreev reflection indicates either a pinhole or a "near" pinhole.
    • (1982) Phys. Rev. B , vol.25 , pp. 4515
    • Blonder, G.E.1    Tinkham, M.2    Klapwijk, T.M.3
  • 34
    • 0000190933 scopus 로고
    • G. E. Blonder, M. Tinkham, and T. M. Klapwijk, Phys. Rev. B 25, 4515 (1982); G. E. Blonder and M. Tinkham, ibid. 27, 112 (1983) examine the crossover from Andreev reflection to tunneling as the insulating barrier increases in strength. As a practical matter, with a typical band gap (∼10 eV), the Andreev signature should become insignificant for insulating thicknesses greater than a few monolayers. Thus, the presence of Andreev reflection indicates either a pinhole or a "near" pinhole.
    • (1983) Phys. Rev. B , vol.27 , pp. 112
    • Blonder, G.E.1    Tinkham, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.