Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates

Journal of Materials Research

Volumn 24, Issue 10, 2009, Pages 3032-3037

  Lee, Kyu Hyung ^a   Lee, Jeong Yong ^a   Kwon, Young Hae ^b   Kang, Tae Won ^b   You, Joo Hyung ^c   Lee, Dea Uk ^c   Kim, Taewhan ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dongguk University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM DIFFUSION; GAN NANORODS; HYDRIDE VAPOR PHASE EPITAXY; INVERSION DOMAIN BOUNDARIES; LENGTH DIFFERENCE; POLAR REGIONS; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; SLOW GROWTH RATES; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY IMAGES; WURZITE;

CRYSTAL GROWTH; DIFFRACTION; GALLIUM NITRIDE; HOLOGRAPHIC INTERFEROMETRY; NANORODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 70350462978     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0391     Document Type: Article

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