Experimental evaluations of the strength of silicon die by 3-point-bend versus ball-on-ring tests

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 32, Issue 4, 2009, Pages 248-255

  Zhao, Jie Hua ^a   Tellkamp, John ^a   Gupta, Vikas ^a   Edwards, Darvin R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

3 point bend (3PB); Ball on ring (BOR); Die strength; Probabilistic mechanics; Silicon; Weibull distribution

Indexed keywords

3-POINT-BEND (3PB); BACKGRINDING; BACKSIDE GRINDING; BALL-ON-RING (BOR); BALL-ON-RING TESTS; DICING PROCESS; DIE STRENGTH; DIE SURFACE; EDGE DEFECTS; ELECTRONIC PACKAGE; EXPERIMENTAL EVALUATION; HIGH STRESS; INDUCED DEFECTS; INTRINSIC SCATTERING; MECHANICAL BENDING; MECHANICAL STRENGTH; PROBABILISTIC MECHANICS; PROCESS OPTIMIZATION; SEMICONDUCTOR APPLICATIONS; SILICON DIE; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE MATERIALS; WEIBULL;

BENDING TESTS; CRYSTALLINE MATERIALS; DIES; GRINDING (MACHINING); MECHANICS; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPHERES; SURFACE DEFECTS; TESTING; WEIBULL DISTRIBUTION;

SILICON WAFERS;

EID: 70350346592     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2009.2028329     Document Type: Article

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