Influence of exponential doping structure on the performance of GaAs photocathodes

Applied Optics

Volumn 48, Issue 29, 2009, Pages 5445-5450

  Niu, Jun ^a,b   Zhang, Yijun ^b   Chang, Benkang ^b   Yang, Zhi ^b   Xiong, Yajuan ^b  

^a NANYANG INSTITUTE OF TECHNOLOGY   (China)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DIFFUSION; EFFICIENCY; ELECTRIC FIELDS; ELECTRONS; FIELD EMISSION CATHODES; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTOCATHODES; SEMICONDUCTING GALLIUM;

BUILT-IN ELECTRIC FIELDS; CATH-ODE MATERIALS; DIRECTIONAL CONSTANT; DOPING STRUCTURES; ELECTRON DIFFUSION; ELECTRON DIFFUSION LENGTH; GAAS PHOTOCATHODES; MATHEMATICAL EXPRESSIONS;

QUANTUM EFFICIENCY;

EID: 70350316589     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.48.005445     Document Type: Article

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