Influences of performance parameters of GaAs/AlGaAs materials on photoemission

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5209, Issue , 2003, Pages 201-208

  Du, Xiaoqing ^a   Du, Yujie ^a   Chang, Benkang ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electron diffusion length; GaAs AlGaAs; Negative electron affinity; Photocathode; Photoemission; Quantum yield; Recombination velocity

Indexed keywords

ELECTROMAGNETIC WAVE TRANSMISSION; MATHEMATICAL MODELS; OPTIMIZATION; PHOTOEMISSION; PROBABILITY; PROBLEM SOLVING; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRON DIFFUSION LENGTH; GAAS/ALGAAS; NEGATIVE ELECTRON AFFINITY; QUANTUM YIELD; RECOMBINATION VELOCITY;

PHOTOCATHODES;

EID: 1842425824     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504019     Document Type: Conference Paper

References (5)

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