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Volumn 25, Issue 6, 2005, Pages 401-404

Activation of gradient doping GaAs photocathodes grown by molecular beam epitaxy

Author keywords

Activation; GaAs photocathode; Gradient doping; Molecular beam epitaxy; Quantum efficiency

Indexed keywords

ACTIVATION ANALYSIS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EID: 33644834635     PISSN: 16727126     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (8)
  • 1
    • 0031071432 scopus 로고    scopus 로고
    • Influence of the dopant concentration on the photoemission in NEA GaAs photocathodes
    • Vergara G, Gomez L J, Capmany J et al. Influence of the dopant concentration on the photoemission in NEA GaAs photocathodes. Vacuum, 1997, 48(2): 155-160
    • (1997) Vacuum , vol.48 , Issue.2 , pp. 155-160
    • Vergara, G.1    Gomez, L.J.2    Capmany, J.3
  • 2
    • 33644842467 scopus 로고    scopus 로고
    • Chinese source
  • 3
    • 0035776283 scopus 로고    scopus 로고
    • The evaluation system of negative electron affinity photocathode APOC2001, optoelectronics, materials, and devices for communications
    • Fu Rongguo, Chang Benkang, Qian Yunsheng et al. The Evaluation System of Negative Electron Affinity Photocathode APOC2001, Optoelectronics, Materials, and Devices for Communications, 2001, 4580: 614-622
    • (2001) , vol.4580 , pp. 614-622
    • Fu, R.1    Chang, B.2    Qian, Y.3
  • 4
    • 1842425779 scopus 로고    scopus 로고
    • The automatic recording system of dynamic spectral response and its applications
    • Chang Benkang, Du Xiaoqing, Liu Lei et al. The automatic recording system of dynamic spectral response and its applications. SPIE, 2003, 5209: 209-218
    • (2003) SPIE , vol.5209 , pp. 209-218
    • Chang, B.1    Du, X.2    Liu, L.3
  • 6
    • 0016093019 scopus 로고
    • The effect of Cs-O activation temperature on the surface escape probability of NEA (In, Ga) as photocathodes
    • Fisher D G. The effect of Cs-O activation temperature on the surface escape probability of NEA (In, Ga) as photocathodes. IEEE Transaction on Electron Device, 1974, ED-21: 541-542
    • (1974) IEEE Transaction on Electron Device , vol.ED-21 , pp. 541-542
    • Fisher, D.G.1
  • 7
    • 0001698592 scopus 로고
    • In situ surface study of the activating layer on GaAs(Cs, O) photocathodes
    • Rodway D C, Allenson M B. In situ surface study of the activating layer on GaAs(Cs, O) photocathodes. Journal of Physics D: Applied Physics, 1986, 19: 1353-1371
    • (1986) Journal of Physics D: Applied Physics , vol.19 , pp. 1353-1371
    • Rodway, D.C.1    Allenson, M.B.2
  • 8
    • 0014801255 scopus 로고
    • Operation of III-V semi-conductor photocathodes in the semitransparent mode
    • Antypas G A, James L W, Uebbing J J. Operation of III-V semi-conductor photocathodes in the semitransparent mode. Journal of Applied Physics, 1970, 41(7): 2888-2894
    • (1970) Journal of Applied Physics , vol.41 , Issue.7 , pp. 2888-2894
    • Antypas, G.A.1    James, L.W.2    Uebbing, J.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.