Gradient-doping negative electron affinity GaAs photocathodes

Optical Engineering

Volumn 45, Issue 5, 2006, Pages

  Zou, Jijun ^a,b   Chang, Benkang ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b EAST CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

GaAs photocathode; Gradient doping; Integral sensitivity; Molecular beam epitaxy; Negative electron affinity

Indexed keywords

MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

GRADIENT DOPING; INTEGRAL SENSITIVITY; NEGATIVE ELECTRON AFFINITY;

PHOTOCATHODES;

EID: 33748602678     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.2205171     Document Type: Article

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