Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

Applied Optics

Volumn 46, Issue 28, 2007, Pages 7035-7039

  Yang, Zhi ^a   Chang, Benkang ^a   Zou, Jijun ^a,b   Qiao, Jianliang ^a   Gao, Pin ^a   Zeng, Yiping ^c   Li, Hui ^a  

^a Nanjing Vocational Institute of Science and Technology   (China)

^b EAST CHINA UNIVERSITY OF TECHNOLOGY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON AFFINITY; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

DIFFUSION LENGTH; GRADIENT DOPING; INTEGRATED SENSITIVITY; SPECTRAL RESPONSE SENSITIVITY;

PHOTOCATHODES;

EID: 38149111232     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.46.007035     Document Type: Article

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