Low-temperature solution-based growth of ZnO nanorods and thin films on Si substrates

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 12, 2009, Pages 7432-7435

  Jin, Mi Jin ^a   Lee, Sam Dong ^a   Shin, Kyung Sik ^a   Jeong, Soon Wook ^a   Yoon, Dae Ho ^b   Jeon, Daewoo ^c   Lee, In Hwan ^c   Lee, Do Kyung ^d   Kim, Sang Woo ^a  

^a Kumoh National Institute of Technology   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Chonbuk National University   (South Korea)

^d Gumi Electronics and Information Technology Research Institute (GERI)   (South Korea)

Author keywords

Aqueous solution process; Blueshift; Nanorod; Photoluminescence; Si substrate; Thin film; Zno

Indexed keywords

AQUEOUS SOLUTION PROCESS; AQUEOUS SOLUTIONS; BLUESHIFT; BURSTEIN-MOSS EFFECTS; EMISSION BANDS; GROWTH ORIENTATIONS; HEXAGONAL STRUCTURES; LARGE LATTICE MISMATCH; LATERAL GROWTH; LOW TEMPERATURES; PHOTOLUMINESCENCE SPECTRUM; SEED FORMATION; SI (100) SUBSTRATE; SI SUBSTRATE; SI SUBSTRATES; SINGLE-CRYSTALLINE; WELL-ALIGNED; ZNO; ZNO NANOROD; ZNO THIN FILM;

CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; LATTICE MISMATCH; NANORODS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70350212826     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1762     Document Type: Conference Paper

References (24)

1. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
2. J. Goldberger, D. J. Sirbuly, M. Law, and P. Yang, J. Phys. Chem, B 109, 9 (2005).
3. Z. L. Wang and J. Song, Science 312, 242 (2006).
4. Y. Y. Noh, X. Cheng, H. Sirringhaus, J. I. Sohn, M. E. Welland, and D. J. Kang, Appl. Phys. Lett. 91, 043109 (2007).
5. Z. L. Wang, Mater. Today 7, 26 (2004).
6. W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, Adv. Mater. 14, 1841 (2002).
7. P. X. Gao, C. S. Lao, Y. Ding, and Z. L. Wang, Adv. Funct. Mater. 16, 53 (2006).
8. H. J. Son, K. A. Jeon, C. E. Kim, J. H. Kim, K. H. Yoo, and S. Y. Lee, Appl. Surf. Sci. 253, 7848 (2007).
9. M. G. Ambia, M. N. Islam, and M. O. Hakim, J. Mater. Sci. 29, 6575 (1994).
10. N. Saito, H. Haneda, T. Sekiguchi, N. Ohashi, I. Sakaguchi, and K. Koumoto, Adv. Mater. 14, 418 (2002).
11. J. H. Kim, E. M. Kim, D. Andeen, D. Thomson, S. P. DenBaars, and F. F. Lange, Adv. Funct. Mater. 17, 463 (2007).
12. L. Vayssieres, K. Keis, S. Lindquist, and A. Hagfelt, J. Phys. Chem. B 105, 3350 (2001).
13. M. Law, L. E. Greene, J. C. Johnson, R. Saykally, and P. Yang, Nat. Mater. 4, 255 (2005).
14. J. S. Huang and C. F. Lin, J. Appl. Phys. 103, 014304 (2008).
15. S. W. Kim, Sz. Fujita, M. S. Yi, and D. H. Yoon, Appl. Phys. Lett. 88, 253114 (2006).
16. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem., Int. Ed. 42, 3031 (2003).
17. E. Burstein, Phys. Rev. 93, 632 (1954).
18. S. W. Kim, Sz. Fujita, and Sg. Fujita, Appl. Phys. Lett. 81, 5036 (2002).
19. S. W. Kim, M. Ueda, M. Funato, Sg. Fujita, and Sz. Fujita, J. Appl. Phys. 97, 104316 (2005).
20. A. Teke, U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth, J. Nause, and H. O. Everitt, Phys. Rev. B 70, 195207 (2004).
21. Y. Gu, I. L. Kuskovsky, M. Yin, S. O'Brien, and G. F. Neumark, Appl. Phys. Lett. 85, 3833 (2004).
22. E. Y. P. Varshni, Physica 34, 149 (1967).
23. N. K. Park, Y. J. Lee, J. Y. Jung, W. G. Lee, Y. J. Bae, S. H. Yoon, G. B. Han, S. O. Ryu, and T. J. Lee, J. Nanosci. Nanotechnol. 8, 4653 (2008).
24. F. K. Shan, G. X. Liu, W. J. Lee, K. R. Bae, B. C. Shin, and H. S. Kim, J. Nanosci. Nanotechnol. 8, 5203 (2008).