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Volumn 8, Issue 9, 2008, Pages 4653-4657
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Epitaxial growth of ZnO nanowires over the ZnO thin films deposited on the Si and sapphire substrates
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Author keywords
Epitaxial growth; Impinging flow method; Modified thermal evaporation method; Single crystal ZnO nanowire; ZnO thin layer
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Indexed keywords
CHEMICAL BATHS;
CRITICAL EFFECTS;
DEPOSITION PROCESSES;
DIFFERENT SUBSTRATES;
EFFICIENT METHODS;
EXPERIMENTAL SET-UP;
IMPINGING FLOW METHOD;
IMPINGING FLOWS;
LOW TEMPERATURES;
METALLIC CATALYSTS;
MODIFIED THERMAL EVAPORATION METHOD;
SAPPHIRE SUBSTRATES;
ZINC OXIDE FILMS;
ZNO NANOWIRES;
ZNO THIN FILMS;
ZNO THIN LAYER;
BUFFER LAYERS;
CORUNDUM;
ELECTRIC WIRE;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
EVAPORATION;
METALLIC FILMS;
MOISTURE;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
OPTICAL FILMS;
OPTICAL WAVEGUIDES;
POWDERS;
SAPPHIRE;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SILICON;
SINGLE CRYSTALS;
SUBSTRATES;
THERMAL EVAPORATION;
THICK FILMS;
THIN FILMS;
VAPORS;
ZINC;
ZINC ALLOYS;
ZINC OXIDE;
OXIDE FILMS;
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EID: 55849103925
PISSN: 15334880
EISSN: None
Source Type: Journal
DOI: 10.1166/jnn.2008.IC82 Document Type: Conference Paper |
Times cited : (9)
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References (19)
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