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Volumn 106, Issue 7, 2009, Pages

Ablation and structural changes induced in InP surfaces by single 10 fs laser pulses in air

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FEMTOSECOND LASER PULSE; FLUENCES; FS LASER PULSE; GAUSSIANS; INP; MATERIAL STRUCTURE; MORPHOLOGICAL FEATURES; NEAR-SURFACE; POLYCRYSTALLINE GRAINS; SHARP BOUNDARIES; SINGLE-CRYSTALLINE; SOLIDIFIED LAYER; SPATIAL EXTENT; STRUCTURAL CHANGE; TI: SAPPHIRE LASER; WAFER SURFACE;

EID: 70350104974     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3236630     Document Type: Article
Times cited : (11)

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    • Note that a similar scenario has been proposed in Ref. to explain the shape of crater profiles of GaAs ablated by single femtosecond-laser pulse in air (620 nm, 100 fs, and 45°). The similarity of the behavior of GaAs and InP (which both have a very similar band structure) suggests that this, along with their values for the single- and two-photon absorption coefficients, plays a crucial role in the formation of the protrusion and distinguishes these direct semiconductor materials from other (indirect) semiconductors, such as Si and Ge, under similar excitation conditions (where such a protrusion has not been observed).
    • Note that a similar scenario has been proposed in Ref. to explain the shape of crater profiles of GaAs ablated by single femtosecond-laser pulse in air (620 nm, 100 fs, and 45°). The similarity of the behavior of GaAs and InP (which both have a very similar band structure) suggests that this, along with their values for the single- and two-photon absorption coefficients, plays a crucial role in the formation of the protrusion and distinguishes these direct semiconductor materials from other (indirect) semiconductors, such as Si and Ge, under similar excitation conditions (where such a protrusion has not been observed).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.