On the origin of preferential growth of semiconducting single-walled carbon nanotubes

Journal of Physical Chemistry B

Volumn 109, Issue 15, 2005, Pages 6968-6971

  Li, Yiming ^a   Peng, Shu ^b   Mann, David ^a   Cao, Jien ^a   Tu, Ryan ^a   Cho, K J ^b   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; PREFERENTIAL GROWTH; SEMICONDUCTING NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWNT);

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTANCE; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR GROWTH; STABILIZATION; SYNTHESIS (CHEMICAL); THERMODYNAMICS; TUBES (COMPONENTS);

CARBON NANOTUBES;

EID: 18144396187     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp050868h     Document Type: Article

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