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Journal of Crystal Growth

Volumn 283, Issue 1-2, 2005, Pages 147-155

Homoepitaxial growth of dense ZnO(0 0 0 1) and ZnO (1 1 2̄ 0) films via MOVPE on selected ZnO substrates

(4) Pierce, J M a,c,d Adekore, B T a Davis, R F a Stevie, F A b

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

c Research Tringle Institute ^* (United States)

d RTI INTERNATIONAL (United States)

Author keywords

A1. Crystal morphology; A1. Impurities; A1. X ray diffraction; A3. Organometallic vapor phase deposition; B1.ZnO

Indexed keywords

DENSIFICATION; DEPOSITION; EPITAXIAL GROWTH; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

CRYSTAL MORPHOLOGY; DIETHYLZINC PRECURSOR; HOMOEPITAXIAL GROWTH; ULTRA-HIGH-PURITY (UHP);

ZINC OXIDE;

EID: 24144458926 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.05.070 Document Type: Article

Times cited : (22)

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