A plasma damage resistant ultra low-k hybrid dielectric structure for 45nm node copper dual-damascene interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 228-230

  Nakamura, N ^a   Yoshizawa, T ^a   Watanabe, T ^a   Miyajima, H ^a   Nakao, S ^a   Yamada, N ^a   Fujita, K ^a   Matsunaga, N ^a   Shibata, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ETCHING; OPTICAL INTERCONNECTS; PERMITTIVITY; PLASMAS; POLYMERS; REACTIVE ION ETCHING;

BARRIER METALS (BM); DAMASCENE; PLASMA DAMAGE; PROCESS INTEGRATION;

DIELECTRIC MATERIALS;

EID: 8644276426     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K.Higashi et al., Proc. of IITC (2002) p.15
2. R.Kanamura et al., Symp. on VLSI Tech. (2003) p.107
3. A.Kajita et al., Proc. of IITC (2003) p.9
4. A.Danel et al., Proc. of IITC (2003) p248
5. A.Bhanap et al.,"Repairing Process-Induced Damage to Porous Low-KILDs by Post Ash Treatment", Proc. of AMC 2003, P40 (2003)