Impact of damage restoration process on electrical properties and reliability of porous low-k SiOC/copper dual-damascene interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 707-712

  Nakamura, N ^a   Yamada, N ^b   Nakao, S ^b   Akiyama, K ^b   Miyajima, H ^b   Matsunaga, N ^a   Enomoto, Y ^c   Shibata, H ^a  

^a Semiconductor Company   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEGRADATION; OXIDATION; POROUS MATERIALS; STRESS ANALYSIS; THIN FILMS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; MORPHOLOGY; POROUS SILICON;

BARRIER METAL (BM) OXIDATION; DUAL DAMASCENE INTERCONNECTS; MORPHOLOGY DEGRADATION; RESTORATION PROCESS; DAMAGE RESTORATION PROCESS; DAMAGE-INDUCED BARRIER METAL (BM) OXIDATION; STRESS-MIGRATION; YIELD DEGRADATION;

ELECTRIC PROPERTIES; OPTICAL INTERCONNECTS;

EID: 33644963556     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A.Bhanap et al., Proc. of AMC 2003 (2003), P40
2. N.Nakamura, T.Yoshizawa, T.Watanabe, H.Miyajima, S.Nakao, N.Yamada, K.Fujita and H.Shibata, Proc. of IITC (2004), pp228-230.
3. N.Matsunaga N.Nakamura, K.Higashi, H.Yamaguchi, T.Watanabe, K.Akiyama, S.Nakao, K.Fujita, H.Miyajima, S.Omoto, A.Sakata, T.Katata, Y.Kagawa, H.Kawashima, Y.Enomoto, T.Hasegawa and H.Shibata, Proc. of IITC (2005), pp6-8.
4. M.Okazaki, M.Hatano, K.Yoshida, S.Shibasaki, H.Kaneko, T.Yoda and N.Hayasaka, Proc. of IITC (2004), pp211-213