Low-voltage organic field-effect transistors with a gate insulator of Ta2O5 formed by sputtering

Chemistry Letters

Volumn 33, Issue 9, 2004, Pages 1172-1173

  Sakai, Heisuke ^a   Furukawa, Yukio ^a   Fujiwara, Eiichi ^b   Tada, Hirokazu ^b,c  

^a WASEDA UNIVERSITY   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

POLY[2 METHOXY 5 (2' ETHYLHEXYLOXY) 1,4 PHENYLENEVINYLENE]; SILICON; TANTALUM; UNCLASSIFIED DRUG; VINYL DERIVATIVE;

ARTICLE; ELECTRIC POTENTIAL; INSULATOR ELEMENT; SEMICONDUCTOR;

EID: 9344262903     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.2004.1172     Document Type: Article

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